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| HMC365 v04.1007 GaAs HBT MMIC DIVIDE-BY-4, DC - 13 GHz 1 FREQUENCY DIVIDERS - CHIP Typical Applications Prescaler for DC to Ku Band PLL Applications: * Satellite Communication Systems * Fiber Optic * Piont-to-Point and Point-to-Multi-Point Radios * VSAT Features Ultra Low SSB Phase Noise: -151 dBc/Hz Wide Bandwidth Output Power: 5 dBm Single DC Supply: +5V Small Size: 1.30 x 0.69 x 0.1 mm Functional Diagram General Description The HMC365 is a low noise Divide-by-4 Static Divider with InGaP GaAs HBT technology that has a small size of 1.30 x 0.69 mm. This device operates from DC (with a square wave input) to 13 GHz input frequency with a single +5V DC supply. The low additive SSB phase noise of -151 dBc/Hz at 100 kHz offset helps the user maintain good system noise performance. Electrical Specifi cations, TA = +25 C, 50 Ohm System, Vcc = 5V Parameter Maximum Input Frequency Minimum Input Frequency Input Power Range Sine Wave Input. [1] Fin = 1 to 10 GHz Fin = 10 to 12 GHz Fin = 12 to 13 GHz Output Power [2] Reverse Leakage SSB Phase Noise (100 kHz offset) Output Transition Time Supply Current (Icc) [2] [1] Divider will operate down to DC for square-wave input signal. [2] When operated in high power mode (pin 8 connected to ground). Fin = 13 GHz Both RF Outputs Terminated Pin = 0 dBm, Fin = 6 GHz Pin = 0 dBm, Fout = 882 MHz -15 -10 -5 2 Conditions Min. 13 Typ. 14 0.2 >-20 >-15 >-8 5 45 -151 100 110 0.5 +10 +3 +3 Max. Units GHz GHz dBm dBm dBm dBm dB dBc/Hz ps mA 1 - 26 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC365 v04.1007 GaAs HBT MMIC DIVIDE-BY-4, DC - 13 GHz Input Sensitivity Window, T= 25 C 20 Input Sensitivity Window vs. Temperature 20 1 FREQUENCY DIVIDERS - CHIP 1 - 27 10 INPUT POWER (dBm) INPUT POWER (dBm) 10 0 Recommended Operating Window 0 -10 -10 Min Pin +25 C Max Pin +25 C Min Pin +85 C Max Pin +85 C Min Pin -55 C Max Pin -55 C -20 -20 -30 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 INPUT FREQUENCY (GHz) -30 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 INPUT FREQUENCY (GHz) Output Power vs. Temperature 10 9 8 7 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 0 1 2 3 4 5 6 7 SSB Phase Noise Performance, Pin= 0 dBm, T= 25 C 0 SSB PHASE NOISE (dBc/Hz) -20 -40 -60 -80 OUTPUT POWER (dBm) +25 C +85 C -55 C -100 -120 -140 -160 2 10 8 9 10 11 12 13 14 15 10 3 10 4 10 5 10 6 10 7 INPUT FREQUENCY (GHz) OFFSET FREQUENCY (Hz) Output Harmonic Content, Pin= 0 dBm, T= 25 C 0 3rd Harmonic Reverse Leakage, Pin= 0 dBm, T= 25 C 0 -10 POWER LEVEL (dBm) -20 -30 -40 -50 -60 Both Output Ports Terminated One Output Port Terminated OUTPUT LEVEL (dBm) -10 -20 Pfeedthru -30 -40 2nd Harmonic -50 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 INPUT FREQUENCY (GHz) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 INPUT FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC365 v04.1007 GaAs HBT MMIC DIVIDE-BY-4, DC - 13 GHz 1 FREQUENCY DIVIDERS - CHIP Output Voltage Waveform, Pin= 0 dBm, Fout= 882 MHz, T= 25 C 700 600 500 400 300 200 100 0 -100 -200 -300 -400 -500 -600 -700 22.7 22.9 23.1 23.3 23.5 23.7 23.9 24.1 24.3 24.5 24.7 TIME (nS) Absolute Maximum Ratings RF Input (Vcc = +5V) Vcc VLogic Storage Temperature Operating Temperature +13 dBm +5.5V Vcc -1.6V to Vcc -1.2V -65 to +150 C -55 to +85 C AMPLITUDE (mV) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Typical Supply Current vs. Vcc Vcc (V) 4.75 5.0 5.25 Icc (mA) 94 110 118 Note: Divider will operate over full voltage range shown above Outline Drawing Die Packaging Information [1] Standard WP-8 Alternate [2] NOTES: 1. ALL DIMENSIONS IN INCHES (MILLIMETERS) 2. ALL TOLERANCES ARE 0.001 (0.025) 3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND 4. BOND PADS ARE 0.004 (0.100) SQUARE 5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150) 6. BACKSIDE METALLIZATION: GOLD 7. BOND PAD METALLIZATION: GOLD [1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 - 28 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC365 v04.1007 GaAs HBT MMIC DIVIDE-BY-4, DC - 13 GHz Pad Description Pad Number Function Description Interface Schematic 1 RF Input 180 out of phase with pad 3 for differential operation. AC ground for single ended operation. 1 IN 2 IN RF Input must be DC blocked. 3, 4, 5 Vcc Supply Voltage 5V 0.25V can be applied to pad 3, 4, or 5. 6 OUT Divided Output 7 OUT Divided output 180 out of phase with OUT. 8 PWR SEL In the low power mode, the power select pin is left floating. By grounding this pin, the output power is increased by approximately 10 dB. 9 PWR DWN The power down pin is grounded for normal operation. Applying 5 volts to this pin will power down this device. 10 DISABLE The disable pin is grounded for normal operation. Applying 5 volts to this pin will disable the input buffer amplifier. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 29 FREQUENCY DIVIDERS - CHIP HMC365 v04.1007 GaAs HBT MMIC DIVIDE-BY-4, DC - 13 GHz 1 FREQUENCY DIVIDERS - CHIP Truth Table Function DISABLE PWR DWN PWR SEL Pin 10 9 5V Output Off Power Down X GND Output On Power Up High Power Output Float X X Low Power Output 8 X = State not permitted. Assembly Diagrams To +5V Vcc Supply (Bypassed via 10 uF Capacitor). AC coupling capacitors. AC coupling capacitors. Optional AC coupled differential input. Should be AC grounded for single ended operation. Optional AC coupled differential output. For best single ended reverse leakage performance, this port should be terminated into 50 ohm. This port should be grounded for normal operation. Applying +5V to this port will disable the input buffer amplifier. This port should be grounded for normal operation. Applying +5V to this port will power down the device. For high power output, this port should be bonded to ground. For low power output, this port should be floating. 1 - 30 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC365 v04.1007 GaAs HBT MMIC DIVIDE-BY-4, DC - 13 GHz Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 1 FREQUENCY DIVIDERS - CHIP 1 - 31 Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and fl at. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com |
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